IDC08S120E edited by infineon technologies, aim imm, rev. 2.1, 28.01.2009 1200v thinq! tm sic schottky diode applications: ? motor drives / solar inverters ? high voltage ccm pfc ? switch mode power supplies ? high voltage multipliers features: ? revolutionary semiconductor material - silicon carbide ? switching behaviour benchmark ? no reverse recovery / no forward recovery ? temperature independent switching behaviour ? qualified according to jedec 1) based on target applications a c chip type v br i f die size package IDC08S120E 1200v 7.5a 2.012 x 2.012 mm 2 sawn on foil mechanical parameters raster size 2.012 x 2.012 anode pad size 1.476 x 1.476 area total 4.05 mm 2 thickness 362 m wafer size 100 mm max. possible chips per wafer 1652 passivation frontside photoimide pad metal 3200 nm al backside metal ni ag ?system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 350m reject ink dot size ? 0.3 mm recommended storage environment store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c
IDC08S120E edited by infineon technologies, aim imm, rev. 2.1, 28.01.2009 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm t vj =25 c 1200 dc blocking voltage v dc 1200 v continuous forward current, limited by t vjmax i f t vj < 150c 7.5 t c = 25 c , t p = 10 ms 39 surge non repetitive forward current, sine halfwave i f,sm t c = 150 c , t p = 10 ms 33 repetitive peak forward current, limited by thermal resistance r th i f,rm t c = 100 c , t vj = 150 c , d= 0.1 32 non-repetitive peak forward current i f,max t c = 25 c , t p = 10s 160 a t c = 25 c , t p = 10 ms 7 i 2 t value dt i 2 t c = 150 c , t p = 10 ms 5 a 2 s operating junction and storage temperature range t vj , t stg -55...+175 c static characteristics (tested on wafer) value parameter symbol conditions min. typ. max. unit reverse current i r v r = 1200v , t vj = 25 c 8 180 a diode forward voltage v f i f = 7.5a , t vj = 25 c 1.6 1.8 v static characteristics (not subject to production test - verified by design / characterization) value parameter symbol conditions min. typ. max. unit reverse current i r v r = 1200v , t vj = 150 c 30 1000 a diode forward voltage v f i f = 7.5a , t vj = 150 c 2.5 3 v
IDC08S120E edited by infineon technologies, aim imm, rev. 2.1, 28.01.2009 dynamic characteristics (not subject to production test - verified by design / characterization) value parameter symbol conditions min. typ. max. unit total capacitive charge 3) q c t vj = 150c 27 nc switching time 2) t c i f <=i f,max d i /d t = 200a/ s v r = 1200v t vj = 150c <10 ns v r = 1v 380 v r = 300v 30 total capacitance c f= 1mhz v r = 600v 27 pf 1) j-std20 and jesd22 2) t c is the time constant for the capacitive di splacement current waveform (independent from t vj = 150c, i load and d i/ d t), different from t rr , which is dependent on t vj = 150c, i load , d i/ d t. no reverse recovery time constant t rr due to absence of minority carrier inject. 3) only capacitive charge occurring, guaranteed by design (independent from t vj , i load and d i/ d t).
IDC08S120E edited by infineon technologies, aim imm, rev. 2.1, 28.01.2009 chip drawing a: anode pad a
IDC08S120E edited by infineon technologies, aim imm, rev. 2.1, 28.01.2009 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device according to mil-std 883 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.
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